N-channel power MOSFET featuring 30V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 8mΩ (typical 6.7mΩ) and a maximum power dissipation of 35W. Designed for surface mount applications with a TDSON-8 plastic package, it operates across a wide temperature range of -55°C to 150°C. This RoHS compliant component includes tin, matte contact plating and is packaged in cut tape.
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Infineon BSC080N03MSGATMA1 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 6.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 8mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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