P-channel MOSFET featuring 30V drain-source voltage and 8mΩ Rds(on) for efficient power switching. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 30A and a maximum power dissipation of 89W. Designed for surface mounting with tin contact plating, it operates across a wide temperature range from -55°C to 150°C. The component is RoHS compliant and packaged in cut tape.
MountingSurface Mount
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Technical Specifications
Infineon BSC080P03LSGAUMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.14nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC080P03LSGAUMA1 Datasheet
Download the complete datasheet for Infineon BSC080P03LSGAUMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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