Power Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Infineon BSC082N10LSGATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 8.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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