Infineon
BSC084P03NS3GATMA1
Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC084P03NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC084P03NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC084P03NS3GATMA1 to view detailed technical specifications.
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