N-Channel Power MOSFET, 30V Vdss, 100A continuous drain current, and 1.6mR drain-to-source resistance. Features include 1.9mR on-state resistance, 4.8ns fall time, 5.4ns turn-on delay, and 28ns turn-off delay. Operates from -55°C to 150°C with 69W power dissipation. This surface mount device is RoHS compliant and Halogen Free.
MountingSurface Mount
Power69W
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Technical Specifications
Infineon BSC0901NSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 1.9mR |
| Package Quantity | 5000 |
| Power Dissipation | 69W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 5.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC0901NSATMA1 Datasheet
Download the complete datasheet for Infineon BSC0901NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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