Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Sign in to ask questions about the Infineon BSC0906NSATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC0906NSATMA1 technical specifications.
| Continuous Drain Current (ID) | 63A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 1.27mm |
| Lead Free | Contains Lead |
| Length | 5.9mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Number of Channels | 1 |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.4ns |
| Weight | 0.003527oz |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC0906NSATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
