Infineon
BSC0908NS
Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSC0908NS technical specifications.
General
Continuous Drain Current (ID)
49A
Drain to Source Breakdown Voltage
34V
Drain to Source Resistance
6.7mR
Drain to Source Voltage (Vdss)
34V
Fall Time
2.8ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
1.22nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
16.4ns
Turn-On Delay Time
4.6ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSC0908NS Datasheet
Download the complete datasheet for Infineon BSC0908NS to view detailed technical specifications.
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