This N-channel power MOSFET is specified for 34 V drain-source voltage and continuous drain current up to 44 A at VGS = 10 V and TC = 25 °C. It provides low on-resistance with a maximum RDS(on) of 9.2 mΩ at 10 V gate drive and 11.8 mΩ at 4.5 V, making it suitable for 5 V drive applications and high-frequency switch-mode power supplies. The device is housed in a PG-TDSON-8 package and supports operation from -55 °C to 150 °C junction temperature. It is 100% avalanche tested and features improved switching behavior, low gate charge, Pb-free plating, RoHS compliance, and halogen-free material qualification according to IEC 61249-2-21.
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Infineon BSC0909NS technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Pin Count | 8 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
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