The BSC0909NSATMA1 is a N-CHANNEL MOSFET with a maximum continuous drain current of 44A and a drain to source breakdown voltage of 34V. It features a drain to source resistance of 7.7mR and an on-state resistance of 9.2mR. The device is packaged in a SMALL OUTLINE, R-PDSO-F5 package and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 27W.
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSC0909NSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 34V |
| Drain to Source Resistance | 7.7mR |
| Drain to Source Voltage (Vdss) | 34V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.11nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| On-State Resistance | 9.2mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 9.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 8.9ns |
| Turn-On Delay Time | 9.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC0909NSATMA1 Datasheet
Download the complete datasheet for Infineon BSC0909NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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