N-channel silicon MOSFET featuring 30V drain-source voltage and 48A continuous drain current. Offers low on-state resistance of 7.5mR (typical) and 9mR (max) at 25°C. Designed for surface mount applications with a TDSON-8 plastic package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 32W. Halogen-free and RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC090N03LSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Surface Mount |
| On-State Resistance | 9mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC090N03LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC090N03LSGATMA1 to view detailed technical specifications.
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