N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET designed for small signal applications. Features include a continuous drain current of 32A, drain-to-source resistance of 3.7mR, and a gate-to-source voltage of 20V. This device operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a GREEN, PLASTIC TISON-8 (100) with Tin contact plating, it is RoHS compliant and Halogen Free.
Package100
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSC0924NDIATMA1 technical specifications.
General
| Package/Case | 100 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Resistance | 3.7mR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.16nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| On-State Resistance | 5mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC0924NDIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0924NDIATMA1 to view detailed technical specifications.
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