N-channel power MOSFET featuring 40V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 9.3mΩ (typical) and 7.8mΩ (drain-to-source). Designed for surface mount applications with a TDSON-8 package, this silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 35W. Includes fast switching characteristics with turn-on delay of 3.6ns and fall time of 2.8ns.
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Infineon BSC093N04LSGATMA1 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 9.3mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.6ns |
| RoHS | Compliant |
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