N-Channel Power MOSFET featuring 100V drain-source voltage and 11A continuous drain current. Boasts a low on-resistance of 0.0098 ohms, enabling efficient power switching. This single-element silicon device utilizes a Metal-Oxide-Semiconductor Field-Effect Transistor structure. Housed in a GREEN, plastic SUPERSO8 package with 5 terminals in a DUAL configuration.
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Technical Specifications
Infineon BSC098N10NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC098N10NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC098N10NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.