The BSC100N03MSGATMA1 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 30W and a maximum dual supply voltage of 30V. The device features a drain to source resistance of 8.3mR and an on-state resistance of 10mR. It is RoHS compliant and halogen free, but contains lead. The MOSFET is packaged in a small outline R-PDSO-F8 package and is available in quantities of 5000.
MountingSurface Mount
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Technical Specifications
Infineon BSC100N03MSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Resistance | 8.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| On-State Resistance | 10mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC100N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC100N03MSGATMA1 to view detailed technical specifications.
No datasheet is available for this part.