Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Infineon BSC100N10NSFGXT technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 11.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
