
The BSC110N06NS3GATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 60V and a maximum continuous drain current of 50A. The device is packaged in a small outline R-PDSO-F5 package and is RoHS compliant. It has a maximum power dissipation of 50W and a maximum Rds on of 11mΩ.
Infineon BSC110N06NS3GATMA1 technical specifications.
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC110N06NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
