This N-channel power MOSFET uses Infineon's OptiMOS™ 5 technology and is rated for 150 V drain-source voltage, 76 A drain current, and 11 mΩ maximum RDS(on). It is offered in a SuperSO8 5x6 / PG-TDSON-8 package and is positioned for low-voltage drives, telecom infrastructure, and solar applications. The device is described by Infineon as having lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness to support higher switching frequency operation. The ordering information lists the standard pack as 5000 units for tape-and-reel packaging.
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| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
These are design resources that include the Infineon BSC110N15NS5
750W isolated quarter-brick DC-DC converter reference design for 5G RFPA applications, converting 48V to 50V with 95.3% efficiency using the XDPP1100 digital controller.
