N-Channel Power MOSFET, 30V Vdss, 11A continuous drain current, and 12mΩ Rds On. Features include 1.5nF input capacitance, 5ns fall time, and 7.9ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 28W. Surface mount TDSON-8 package, RoHS compliant, and halogen-free.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC120N03MSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 12mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 7.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC120N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC120N03MSGATMA1 to view detailed technical specifications.
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