N-Channel Power MOSFET, 30V Vdss, 11A continuous drain current, and 12mΩ Rds On. Features include 1.5nF input capacitance, 5ns fall time, and 7.9ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 28W. Surface mount TDSON-8 package, RoHS compliant, and halogen-free.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC120N03MSGATMA1 technical specifications.
General
Contact Plating
Tin
Continuous Drain Current (ID)
11A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
1.5nF
Lead Free
Contains Lead
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
12mR
Package Quantity
5000
Packaging
Cut Tape
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
7ns
Turn-On Delay Time
7.9ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSC120N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC120N03MSGATMA1 to view detailed technical specifications.
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