N-Channel Power MOSFET, 80V Vdss, 11A continuous drain current, and 12.3mΩ maximum on-state resistance. Features 1.87nF input capacitance and 66W maximum power dissipation. Designed for surface mount applications with a TDSON-8 package. Operating temperature range from -55°C to 150°C. Halogen-free and RoHS compliant.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC123N08NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 10.3mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.87nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 12.3mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC123N08NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC123N08NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.