N-Channel Power MOSFET, 100V Drain-to-Source Voltage (Vdss) and 10.6A Continuous Drain Current (ID). Features low Rds On of 12.3mR at 10V Vgs. Operates from -55°C to 150°C with a maximum power dissipation of 114W. Surface mountable in TDSON-8 package, supplied on tape and reel. RoHS compliant with tin contact plating.
MountingSurface Mount
Power114W
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Technical Specifications
Infineon BSC123N10LSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 114W |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC123N10LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC123N10LSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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