N-Channel Power MOSFET, 200V Drain-to-Source Voltage (Vdss), 11.3A Continuous Drain Current (ID), and 125mΩ Maximum On-Resistance (Rds On). Features include a 6ns turn-on delay, 10ns turn-off delay, and 3ns fall time. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 50W. This surface-mount device is RoHS compliant and Halogen Free.
MountingSurface Mount
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Technical Specifications
Infineon BSC12DN20NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 680pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC12DN20NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC12DN20NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.