N-Channel Power MOSFET, 100V Vds, 42A continuous drain current, and 16mΩ Rds On. This single-element silicon Metal-oxide Semiconductor FET features a maximum power dissipation of 60W and operates from -55°C to 150°C. It is designed for surface mounting with a TDSON-8 plastic package and is RoHS compliant.
MountingSurface Mount
Power60W
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Technical Specifications
Infineon BSC160N10NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 42A |
| Drain to Source Resistance | 13.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 16mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 60W |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC160N10NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC160N10NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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