BSC160N15NS5

This N-channel power MOSFET is rated for 150 V drain-source voltage and up to 56 A continuous drain current at 25°C. It is housed in a SuperSO8 5x6 surface-mount package and specifies a maximum RDS(on) of 16 mΩ at 10 V, typical total gate charge of 19 nC, and typical gate-drain charge of 4 nC. The device supports operation from -55°C to 150°C and is specified with 96 W total power dissipation, 50 K/W thermal resistance junction-to-ambient, and 1.3 K/W junction-to-case. It belongs to the OptiMOS™ 5 150 V family and is described for low-voltage drives, telecom, and solar power applications, with RoHS-compliant and halogen-free ordering information on the manufacturer site.