N-Channel Power MOSFET featuring 120V drain-source voltage and 19mΩ maximum on-state resistance. This silicon, metal-oxide semiconductor FET offers 44A continuous drain current and 69W maximum power dissipation. Designed for surface mounting in a TDSON-8 plastic package, it operates from -55°C to 150°C. RoHS compliant and halogen-free, this component is supplied in cut tape packaging.
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSC190N12NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 44A |
| Drain to Source Resistance | 16.6mR |
| Drain to Source Voltage (Vdss) | 120V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 120V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| On-State Resistance | 19mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC190N12NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC190N12NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
