N-Channel Power MOSFET, 100V Drain-to-Source Voltage (Vdss), 45A Continuous Drain Current (ID), and 19.6mΩ Rds On Max. This single-element silicon Metal-oxide Semiconductor FET features a maximum power dissipation of 78W and a threshold voltage of 3V. It operates within a temperature range of -55°C to 150°C and includes tin contact plating. The component is surface mountable, packaged on tape and reel, and is RoHS compliant.
MountingSurface Mount
Power78W
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Technical Specifications
Infineon BSC196N10NSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 78W |
| Rds On Max | 19.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC196N10NSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC196N10NSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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