N-Channel Power MOSFET, 200V Vds, 7A Continuous Drain Current, 0.225 Ohm Rds(on), and 34W Power Dissipation. Features a 3V Threshold Voltage, 20V Gate to Source Voltage, and a maximum operating temperature of 150°C. This surface-mount device utilizes Tin contact plating and is RoHS compliant.
MountingSurface Mount
Power34W
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Technical Specifications
Infineon BSC22DN20NS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 34W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC22DN20NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC22DN20NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.