N-Channel Power MOSFET, 100V Vds, 7.2A continuous drain current, and 25.2mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 1-element design with a maximum power dissipation of 78W. It is surface mountable, halogen-free, and RoHS compliant, with tin contact plating. Operating temperature range is -55°C to 150°C.
MountingSurface Mount
Power78W
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Technical Specifications
Infineon BSC252N10NSFGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 78W |
| Rds On Max | 25.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC252N10NSFGATMA1 Datasheet
Download the complete datasheet for Infineon BSC252N10NSFGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.