N-channel Power MOSFET featuring OptiMOS process technology, designed for surface mounting in an 8-pin TDSON EP package. This single-element transistor offers a maximum drain-source voltage of 200V and a continuous drain current of 36A. Key specifications include a low drain-source on-resistance of 32mOhm at 10V, a typical gate charge of 22nC, and an input capacitance of 1770pF at 100V. The compact plastic package measures 5.15mm x 5.9mm with a 1.27mm pin pitch, supporting a maximum power dissipation of 125W and operating temperatures from -55°C to 150°C.
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| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | TDSON EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.15 |
| Package Width (mm) | 5.9 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Package Orientation | Yes |
| Package Orientation Marking Type | Dot |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 36A |
| Maximum Drain Source Resistance | 32@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 1770@100VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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