N-Channel Power MOSFET, 80V Vdss, 7A Continuous Drain Current, and 34mR Rds On. Features include 2ns fall time, 8ns turn-on delay, and 11ns turn-off delay. This single-element silicon FET offers a max power dissipation of 32W and operates from -55°C to 150°C. It is surface mountable in a TDSON-8 package and is RoHS compliant.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC340N08NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 756pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC340N08NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC340N08NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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