
N-Channel Power MOSFET, 150V Drain to Source Voltage (Vdss), 33A Continuous Drain Current (ID), and 36mR On-State Resistance. Features include a 3V Threshold Voltage, 1.19nF Input Capacitance, and a maximum power dissipation of 74W. This surface-mount device operates from -55°C to 150°C and is packaged in TDSON-8 with Tin contact plating. It is RoHS compliant and designed for demanding power applications.
Infineon BSC360N15NS3GATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.19nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 36mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 36mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC360N15NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
