N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 24A Continuous Drain Current (ID), and 50mΩ On-State Resistance (Rds On Max). Features include 1.58nF input capacitance, 96W maximum power dissipation, and operation across a -55°C to 150°C temperature range. This silicon, metal-oxide semiconductor field-effect transistor is designed for surface mounting in a TDSON-8 plastic package with tin contact plating. It is RoHS compliant and utilizes a 1-element configuration.
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| Contact Plating | Tin |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.58nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| On-State Resistance | 50mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 96W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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