BSC500N20NS3GATMA1

N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 24A Continuous Drain Current (ID), and 50mΩ On-State Resistance (Rds On Max). Features include 1.58nF input capacitance, 96W maximum power dissipation, and operation across a -55°C to 150°C temperature range. This silicon, metal-oxide semiconductor field-effect transistor is designed for surface mounting in a TDSON-8 plastic package with tin contact plating. It is RoHS compliant and utilizes a 1-element configuration.