N-channel Power MOSFET featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers low 52mΩ on-state resistance for efficient power switching. Designed with a 57W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. This silicon, metal-oxide semiconductor FET is packaged in a TDSON-8 for surface-mount applications. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 3ns.
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| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 52mR |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Length | 5.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| On-State Resistance | 52mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 7ns |
| Width | 6.1mm |
| RoHS | Compliant |
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