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Technical Specifications
Infineon BSC750N10NDGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 720pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC750N10NDGATMA1 Datasheet
Download the complete datasheet for Infineon BSC750N10NDGATMA1 to view detailed technical specifications.
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