The BSC882N03LSG is an N-channel MOSFET with a drain to source breakdown voltage of 34V and a continuous drain current of 100A. It features a drain to source resistance of 2.2 milliohms and a power dissipation of 69W. The device is packaged in a SON package and is available on tape and reel. It operates over a temperature range of -55°C to 150°C.
PackageSON
PolarityN-CHANNEL
Power69W
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Technical Specifications
Infineon BSC882N03LSG technical specifications.
General
| Package/Case | SON |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 34V |
| Drain to Source Resistance | 2.2mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 2V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC882N03LSG Datasheet
Download the complete datasheet for Infineon BSC882N03LSG to view detailed technical specifications.
No datasheet is available for this part.
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