N-Channel Power MOSFET featuring 200V drain-to-source voltage and 15.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 90mΩ at a gate-source voltage of 10V. With a maximum power dissipation of 62.5W and a wide operating temperature range from -55°C to 150°C, it is suitable for surface mount applications. The component includes tin contact plating and is RoHS compliant.
MountingSurface Mount
Power62.5W
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Technical Specifications
Infineon BSC900N20NS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 15.2A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 920pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 62.5W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC900N20NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC900N20NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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