The BSD235NH6327XT is an N-channel MOSFET from Infineon with a drain to source breakdown voltage of 20V and a continuous drain current of 950mA. It features a low drain to source resistance of 350mR and a high switching speed with a fall time of 1.2ns and a turn-off delay time of 4.5ns. The device is packaged in a surface mount SOT-363 package and is rated for a maximum power dissipation of 500mW. It operates over a temperature range of -55°C to 150°C.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSD235NH6327XT technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 950mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 350mR |
| Fall Time | 1.2ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.8mm |
| Input Capacitance | 49pF |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 4.5ns |
| Turn-On Delay Time | 3.8ns |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSD235NH6327XT Datasheet
Download the complete datasheet for Infineon BSD235NH6327XT to view detailed technical specifications.
No datasheet is available for this part.