Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSD235NH6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSD235NH6327XTSA1 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 950mA |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Input Capacitance | 63pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSD235NH6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
