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INFINEON

BSD235NH6327XTSA1

Datasheet
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Infineon

BSD235NH6327XTSA1

Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. Junction Field-Effect Transistors (JFET)

PackageSOT-363-6
MountingSurface Mount
Power500mW
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Technical Specifications

Infineon BSD235NH6327XTSA1 technical specifications.

General

Package/CaseSOT-363-6
Continuous Drain Current (ID)950mA
Drain to Source Voltage (Vdss)20V
FET Type2 N-Channel
Gate to Source Voltage (Vgs)12V
Halogen FreeHalogen Free
Input Capacitance63pF
Lead FreeLead Free
Max Dual Supply Voltage20V
Max Operating Temperature150°C
Min Operating Temperature-55°C
Max Power Dissipation500mW
MountSurface Mount
Number of Elements2
PackagingTape and Reel
Power Dissipation500mW
Radiation HardeningNo
Rds On Max350mR
RoHS CompliantYes
SeriesOptiMOS™

Compliance

RoHSCompliant

Datasheet

Infineon BSD235NH6327XTSA1 Datasheet

Download the complete datasheet for Infineon BSD235NH6327XTSA1 to view detailed technical specifications.

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