Sign in to ask questions about the Infineon BSD840NL6327 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSD840NL6327 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 880mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 0.9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 78pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 7.8ns |
| Turn-On Delay Time | 1.9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSD840NL6327 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
