The BSF050N03LQ3G is a N-CHANNEL MOSFET with a maximum operating temperature range of -40°C to 150°C. It has a continuous drain current of 8.9A and a maximum power dissipation of 2.35W. The device is packaged in a SOIC package and is RoHS compliant. The MOSFET has a drain to source breakdown voltage of 30V and a drain to source resistance of 5mR. It also features a gate to source voltage of 20V and an input capacitance of 1.754nF.
PackageSOIC
PolarityN-CHANNEL
Power28W
Quick Jump:
Technical Specifications
Infineon BSF050N03LQ3G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.754nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.35W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 3.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSF050N03LQ3G Datasheet
Download the complete datasheet for Infineon BSF050N03LQ3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.