N-Channel Power MOSFET featuring 19A continuous drain current and 25V drain-source voltage. Boasts a low on-resistance of 0.004 ohms. This silicon Metal-Oxide-Semiconductor FET is designed with two elements and a TISON8-4 package, offering 7 terminals with dual terminal positioning.
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Technical Specifications
Infineon BSG0811NDATMA1 technical specifications.
General
| Number of Terminals | 7 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSG0811NDATMA1 Datasheet
Download the complete datasheet for Infineon BSG0811NDATMA1 to view detailed technical specifications.
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