This device is a dual asymmetric N-channel MOSFET in Infineon's OptiMOS 5 family for high performance buck converter applications. It is logic-level rated for 4.5 V gate drive and integrates a monolithic Schottky-like diode structure. The datasheet lists 25 V drain-source breakdown voltage, low on-resistance down to 0.9 mΩ typical for the low-side FET at 10 V gate drive, and total gate charge as low as 5.6 nC typical for the high-side FET. It is supplied in the PG-TISON8-4 Power Block package and is described as Pb-free, RoHS compliant, halogen-free, and JEDEC-qualified for target applications.
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Infineon BSG0813NDI technical specifications.
| Transistor Type | Dual asymmetric N-channel MOSFET |
| Gate Drive Rating | 4.5V |
| Drain-Source Breakdown Voltage | 25V |
| Drain-Source On-Resistance Q1 @ VGS=4.5 V | 3.2 typ, 4.0 maxmΩ |
| Drain-Source On-Resistance Q2 @ VGS=4.5 V | 1.2 typ, 1.7 maxmΩ |
| Drain-Source On-Resistance Q1 @ VGS=10 V | 2.4 typ, 3.0 maxmΩ |
| Drain-Source On-Resistance Q2 @ VGS=10 V | 0.9 typ, 1.2 maxmΩ |
| Input Capacitance Q1 | 780 typ, 1100 maxpF |
| Input Capacitance Q2 | 2200 typ, 2900 maxpF |
| Total Gate Charge Q1 | 5.6 typ, 8.4 maxnC |
| Total Gate Charge Q2 | 15 typ, 22 maxnC |
| Diode Forward Voltage Q1 | 0.82 typ, 1.0 maxV |
| Diode Forward Voltage Q2 | 0.52 typ, 0.7 maxV |
| Package | PG-TISON8-4 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
