P-channel MOSFET featuring 20V drain-source breakdown voltage and 4.7A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low Rds(on) of 67mΩ at 10V Vgs. Designed for efficient switching, it exhibits a turn-on delay of 8.7ns and a fall time of 23.3ns. The component is housed in a compact TSOP package, rated for 2W maximum power dissipation and operating between -55°C and 150°C.
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Infineon BSL211SP technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | -4.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 23.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Not Halogen Free |
| Height | 1mm |
| Input Capacitance | 654pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 67mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 8.7ns |
| DC Rated Voltage | -20V |
| Width | 1.6mm |
| RoHS | Compliant |
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