Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TSOP-6
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Infineon BSL211SPH6327XTSA1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Input Capacitance | 654pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Rds On Max | 67mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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