N and P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications in a TSOP package. Features a continuous drain current of 1.5A and a drain-to-source voltage (Vdss) of 20V. Offers a low drain-to-source resistance (Rds On) of 140mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. This component is RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
Power500mW
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Technical Specifications
Infineon BSL215CH6327XTSA1 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
108mR
Drain to Source Voltage (Vdss)
20V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Halogen Free
Halogen Free
Height
1.1mm
Input Capacitance
143pF
Lead Free
Lead Free
Max Dual Supply Voltage
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
2
On-State Resistance
150mR
Package Quantity
3000
Packaging
Cut Tape
Power Dissipation
500mW
Rds On Max
140mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Threshold Voltage
950mV
Compliance
RoHS
Compliant
Datasheet
Infineon BSL215CH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSL215CH6327XTSA1 to view detailed technical specifications.
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