N and P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications in a TSOP package. Features a continuous drain current of 1.5A and a drain-to-source voltage (Vdss) of 20V. Offers a low drain-to-source resistance (Rds On) of 140mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. This component is RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
Power500mW
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Technical Specifications
Infineon BSL215CH6327XTSA1 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 143pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| On-State Resistance | 150mR |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Power Dissipation | 500mW |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Threshold Voltage | 950mV |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSL215CH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSL215CH6327XTSA1 to view detailed technical specifications.
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