Power Field-Effect Transistor, 5.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, PLASTIC, TSOP-6
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Infineon BSL307SP technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | -5.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 805pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 43mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 36.4ns |
| Turn-On Delay Time | 7.3ns |
| DC Rated Voltage | -30V |
| Width | 1.6mm |
| RoHS | Compliant |
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