N-Channel and P-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 1.5A. Offers a low drain-to-source resistance of 150mR and a threshold voltage of 1.6V. Packaged in a TSOP surface-mount plastic housing, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Infineon BSL316CL6327 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 94pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 14.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSL316CL6327 Datasheet
Download the complete datasheet for Infineon BSL316CL6327 to view detailed technical specifications.
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