The BSM100GB120DN2 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 150A. It is designed for high-temperature operation, with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The device is packaged in a flange mount configuration and is compliant with RoHS regulations. With a power dissipation of 800W, this IGBT is suitable for demanding applications.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 800W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
