Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.6V |
| Collector-emitter Voltage-Max | 1.7kV |
| Max Collector Current | 200A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 960W |
| RoHS Compliant | No |
| RoHS | Not Compliant |
