The BSM10GP120 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 20A and a maximum power dissipation of 100W. It is packaged in a module with a height of 17mm, length of 107.5mm, and width of 45mm. The transistor is designed to operate within a temperature range of -40°C to 125°C. It is available in a package quantity of 10 per tray and is RoHS compliant.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100W |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSM10GP120 to view detailed technical specifications.
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