The BSM150GB120DN2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 210A. It is packaged in a module with a height of 30.5mm, length of 106.4mm, and width of 61.4mm. The transistor is designed to operate within a temperature range of -40°C to 150°C and has a maximum power dissipation of 1.25kW. The device is RoHS compliant and is available in quantities of 500.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30.5mm |
| Length | 106.4mm |
| Max Collector Current | 210A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.25kW |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 1.25kW |
| RoHS Compliant | Yes |
| Width | 61.4mm |
| RoHS | Compliant |
